Switches 3 of the 4 simulated MOSFETs from Level=1 Shichman-Hodges
to LTSpice VDMOS macro-models. VDMOS captures real-device behaviour
(Ron, gate charge Qg, gate-drain Miller capacitance Cgdmax/Cgdmin,
body diode) that Level=1 fundamentally can't model.
Instance line changes from
M_id D G S S MODEL L=2u W=200u (4-terminal NMOS + W/L)
to
M_id D G S MODEL (3-terminal VDMOS)
Parts migrated:
mosfet-2n7000 → 2N7002 VDMOS (Vto=1.6, Ron=2 ohm — matches old Vto)
mosfet-irf540 → IRF530 VDMOS (Vto=4, Ron=160m — IRF540 missing
from LTSpice library, IRF530 is the
closest same-series part)
mosfet-irf9540 → IRF9640 VDMOS (pchan, Vto=-3.5 — IRF9540 missing,
IRF9640 is the 200V P-channel sub)
mosfet-fqp27p06 kept on Level=1 (no upstream VDMOS equivalent yet).
spice-mosfet-pwm regression test still passes: Id=8.6 mA at Vgs=5V,
0 at Vgs=0V, monotonic across the ramp. All 155 SPICE + analog
examples + lockdown tests pass.
Phase 2.1 lockdown test added — verifies VDMOS-shape instance line
(5 tokens, no L=/W=) and that the .model card carries `VDMOS(`.
Co-Authored-By: Claude Opus 4.7 (1M context) <noreply@anthropic.com>
Asserts the Phase 2 BJTs include Gummel-Poon junction caps (CJC/CJE)
and forward transit time (TF), and the diode upgrades include
reverse-recovery time (tt) and Schottky band-gap (Eg). If anyone
simplifies the models in the future, these regress fail and surface
the loss of AC/transient fidelity.
Also guards the dedupe identity between the canonical diode-1n4148
emission and the relay flyback diode — they must serialise as the same
string or ngspice will reject the netlist for duplicate .model lines.
Co-Authored-By: Claude Opus 4.7 (1M context) <noreply@anthropic.com>
davidmonterocrespo24